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ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE24283B (SPACE QUALIFIED)
FEATURES
* VERY LOW NOISE FIGURE: 0.6 dB TYP at 12 GHz * HIGH ASSOCIATED GAIN: 11.0 dB TYP at 12 GHz * GATE LENGTH: 0.25 m * GATE WIDTH: 200 m * HERMETIC METAL/CERAMIC PACKAGE
Optimum Noise Figure, NFOPT (dB)
1.4 1.2 GA 1 0.8 0.6 0.4 0.2 NF 18 15
NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA
24 21
12 9 6 3
DESCRIPTION
The NE24283B is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also results in lower noise figure and high associated gain. This device is housed in a solder sealed hermetic, metal ceramic package for high reliability in space applications. NEC's stringent quality assurance and test procedures assure the highest reliability and performance.
0 1 10 20 30
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS (TA = 25C)
PART NUMBER PACKAGE OUTLINE SYMBOLS NFOPT1 PARAMETERS AND CONDITIONS Optimum Noise Figure at VDS = 2 V, IDS = 10 mA f = 4 GHz f = 12 GHz Associated Gain at VDS = 2 V, IDS = 10 mA f = 4 GHz f = 12 GHz Output Power at 1 dB Gain Compression Point, f = 12 GHz VDS = 2 V, IDS = 10 mA VDS = 2 V, IDS = 20 mA Gain at P1dB, f = 12 GHz VDS = 2 V, IDS = 10 mA VDS = 2 V, IDS = 20 mA Saturated Drain Current at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, IDS = 100 A Transconductance at VDS = 2 V, IDS = 10 mA Gate to Source Leakage Current at VGS = -3 V Thermal Resistance (Channel-to-Ambient) Thermal Resistance (Channel-to-Case) UNITS dB dB dB dB dBm dBm dB dB mA V mS A C/W C/W 15 -2.0 45 MIN NE24283B 83B TYP 0.35 0.6 16.0 11.0 9.5 11.0 11.8 12.8 40 -0.8 60 0.5 750 350 10 70 -0.2 MAX
0.7
GA1
10.0
P1dB
G1dB
IDSS VP gm IGSO RTH (CH-A) RTH (CH-C)
Note: 1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established of the production line as a "go-no-go" screening tuned for the "generic" type but not for each specimen.
California Eastern Laboratories
Associated Gain, GA (dB)
NE24283B ABSOLUTE MAXIMUM RATINGS1 (TA = 25C)
SYMBOLS VDS VGSO IDS IGRF TCH TSTG PT PARAMETERS Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Total Power Dissipation UNITS V V mA A C C mW RATINGS 4.0 -3.0 IDSS 100 175 -65 to +175 165
TYPICAL NOISE PARAMETERS (TA = 25C)
VDS = 2 V, IDS = 10 mA FREQ. (GHz) 1 2 4 6 8 10 12 14 16 18 20 NFOPT (dB) 0.30 0.31 0.35 0.38 0.43 0.50 0.60 0.71 0.85 1.00 1.20 GA (dB) 22.0 19.0 16.0 14.0 12.5 11.5 11.0 10.3 9.8 9.2 9.0 0.88 0.82 0.73 0.67 0.63 0.57 0.52 0.46 0.40 0.36 0.33 OPT MAG ANG 13 30 57 83 105 128 156 -176 -155 -134 -109 Rn/50 0.33 0.31 0.26 0.20 0.13 0.09 0.06 0.05 0.04 0.04 0.05
Note: 1. Operation in excess of any one of these conditions may result in permanent damage.
TYPICAL PERFORMANCE CURVES (TA = 25C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
250
1.4
NOISE FIGURE AND ASSOCIATED GAIN vs. DRAIN CURRENT VDS = 2 V, f = 12 GHz
14
Total Power Dissipation, PT (mW)
1.2
13
Noise Figure, NF (dB)
200
1 NF 0.8 GA 0.6 0.4
12
150 Infinite Heat Sink 100 Free Air 50
11 10 9
0.2
8 7 0 5 10 15 20 25 30 35
0 0 25 50 75 100 125 150 175 200
0
Ambient Temperature, TA (C)
Drain Current, IDS (mA)
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
50 VGS 0 V
TRANSCONDUCTANCE AND DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE VDS = 2 V
100
Drain Current, IDS (mA)
40 -0.2 V
Drain Current, IDS (mA)
80
60
30
20
-0.4 V
40
10
-0.6 V
20
0 0 5 10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
Drain to Source Voltage, VDS (V)
Gate to Source Voltage, VGS (V)
Transconductance, gm (mS)
Associated Gain, GA (dB)
NE24283B TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25C)
j1.0 j0.5 j2.0 120 90 60
j0.2
18 GHz 18 GHz
0.2 0.5 1.0 2.0
150 j5.0
30
0.0 0.0
5.0 S11 S22 0.1 GHz 0.1 GHz -j5.0
180
S21 .02 .04 .06 .08 S12 0 0.1 GHz 0.1 GHz 18 GHz
2 4 -30 6 8 -90
10
-j0.2
-180 -j0.5 -j1.0 -j2.0
Coordinates in Ohms Frequency in GHz (VDS = 3 V, IDS = 20 mA)
18 GHz
-60
-120
NE24283B VDS = 3 V, IDS = 20 mA
FREQUENCY GHz 0.10 0.20 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 10.50 11.00 1.50 12.00 12.50 13.00 13.50 14.00 14.50 15.00 15.50 16.00 16.50 17.00 17.50 18.00 MAG 0.999 0.999 0.998 0.989 0.976 0.960 0.940 0.920 0.900 0.878 0.852 0.828 0.806 0.784 0.769 0.753 0.739 0.728 0.710 0.692 0.675 0.661 0.644 0.623 0.604 0.586 0.573 0.559 0.547 0.535 0.524 0.511 0.498 0.481 0.463 0.445 0.425 0.409 S11 ANG -1.9 -3.8 -9.5 -18.8 -27.8 -36.7 -45.3 -53.6 -61.6 -69.7 -77.4 -84.5 -91.6 -97.9 -104.3 -110.3 -115.8 -121.3 -126.7 -131.7 -136.3 -141.0 -146.5 -152.1 -158.0 -163.6 -169.2 -174.9 179.7 174.7 169.8 164.4 158.6 152.4 145.9 138.9 131.8 125.1 MAG 5.596 5.570 5.550 5.497 5.405 5.304 5.188 5.048 4.899 4.749 4.580 4.411 4.255 4.150 4.022 3.883 3.757 3.644 3.537 3.448 3.391 3.319 3.269 3.209 3.161 3.101 3.047 2.992 2.936 2.880 2.832 2.806 2.777 2.752 2.727 2.702 2.663 2.602 S21 ANG 177.8 176.0 170.2 160.9 151.8 142.9 134.1 125.6 117.3 109.2 101.4 93.6 86.3 79.4 72.2 65.3 58.5 52.0 45.6 39.3 32.9 26.8 20.4 13.7 7.2 0.9 -5.6 -12.3 -19.0 -25.7 -32.5 -39.2 -46.2 -53.4 -60.9 -68.8 -76.5 -84.2 MAG 0.001 0.002 0.005 0.010 0.015 0.021 0.025 0.030 0.033 0.037 0.041 0.043 0.046 0.048 0.051 0.053 0.055 0.055 0.059 0.062 0.064 0.066 0.067 0.071 0.073 0.076 0.078 0.079 0.081 0.083 0.085 0.088 0.091 0.093 0.097 0.099 0.102 0.102 S12 ANG 89.7 88.4 86.5 78.0 73.2 68.7 62.7 57.7 53.4 48.8 44.7 40.0 37.6 33.7 29.6 26.3 23.2 20.9 18.4 15.5 11.5 8.7 5.6 2.8 -1.7 -4.7 -8.6 -12.4 -16.3 -20.9 -24.6 -29.1 -33.8 -39.6 -45.5 -50.9 -56.6 -63.8 MAG 0.494 0.493 0.493 0.490 0.485 0.482 0.477 0.471 0.466 0.459 0.452 0.444 0.438 0.430 0.425 0.423 0.425 0.428 0.432 0.435 0.436 0.437 0.435 0.431 0.428 0.426 0.432 0.441 0.452 0.467 0.480 0.490 0.497 0.500 0.505 0.512 0.525 0.546 S22 ANG -1.1 -2.7 -6.7 -13.3 -19.8 -26.1 -32.4 -38.5 -44.5 -50.2 -55.9 -61.7 -67.6 -73.9 -79.9 -85.9 -91.8 -97.1 -102.4 -107.3 -112.1 -116.9 -122.4 -128.6 -135.3 -142.6 -150.2 -157.5 -164.1 -170.1 -175.8 178.1 171.4 164.1 155.8 146.7 137.7 129.4 0.134 0.066 0.043 0.170 0.243 0.290 0.376 0.430 0.491 0.547 0.612 0.698 0.741 0.801 0.829 0.869 0.899 0.945 0.950 0.974 1.010 1.035 1.075 1.085 1.115 1.124 1.125 1.139 1.135 1.130 1.122 1.102 1.088 1.098 1.082 1.080 1.064 1.069 K MAG1 (dB) 37.479 34.448 30.453 27.401 25.567 24.024 23.171 22.260 21.716 21.084 20.481 20.111 19.661 19.368 18.969 18.649 18.345 18.212 17.778 17.452 16.621 15.875 15.214 14.778 14.301 13.963 13.764 13.520 13.358 13.209 13.102 13.090 13.040 12.804 12.738 12.639 12.621 12.461
Note: 1. Gain Calculations:
MAG = |S21| |S12|
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
NE24283B OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 83B
1.88 0.3 S
ORDERING INFORMATION
PART NUMBER NE24283B 1. Source 2. Drain 3. Source 4. Gate AVAILABILITY Bulk PACKAGE OUTLINE 83B
0.5 0.1 1.88 0.3 D G
4.0 MIN (ALL LEADS) S 1.0 0.1 1.45 MAX +0.07 0.1 -0.03
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -7/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE

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